In the field of third-generation semiconductor manufacturing, silicon carbide wafer trays and chucks have become irreplaceable key components due to their corrosion resistance and high thermal conductivity. However, the industry pain points exposed during their processing have long plagued precision manufacturing companies.
Typical Processing Case
A silicon carbide wafer tray chuck processing project undertaken by a certain company requires the completion of the cavity and groove structure grinding of D380x5mm workpieces. The hardness of this material reaches HV2,002, which is close to 1/3 of the hardness of natural diamond. Frequent edge collapse problems during processing resulted in a pass rate of less than 60%, and traditional tools were scrapped in 159 minutes, and the processing of a single piece took up to 888 minutes.
Pain points in industry processing
SiC materials face three major challenges in traditional processing due to their high hardness and brittleness:
The chipping rate of workpiece edges is over 35%
The tool wear rate is 3-5 times higher than that of conventional materials
The surface roughness control accuracy of ±0.5μm is difficult to maintain stably
MID solutions innovation practice
In response to the special needs of silicon carbide processing, the MID technical team implemented a three-stage process innovation:
• Introducing a 20kHz ultrasonic vibration assisted processing system
• Customizing an integral PCD micro-blade milling cutter (edge R angle 0.02mm)
• Developing an adaptive dynamic adjustment algorithm for cutting parameters
Process upgrade results
The production data after equipment transformation shows:
1. The chipping rate has dropped to less than 8%
2.The processing time of a single piece has been optimized to 462 minutes
3.The tool life has exceeded 317 minutes
4.The surface roughness is stably controlled at Ra0.4μm
